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MDC3105LT1 Integrated Relay, Inductive Load Driver
This device is intended to replace an array of three to six discrete components with an integrated SMT part. It is available in a SOT-23 package. It can be used to switch 3 to 6 Vdc inductive loads such as relays, solenoids, incandescent lamps, and small DC motors without the need of a free-wheeling diode. * Provides a Robust Driver Interface between D.C. Relay Coil and Sensitive Logic Circuits * Optimized to Switch Relays from a 3 V to 5 V Rail * Capable of Driving Relay Coils Rated up to 2.5 W at 5 V * Features Low Input Drive Current & Good Back-to-Front Transient Isolation * Internal Zener Eliminates Need for Free-Wheeling Diode * Internal Zener Clamp Routes Induced Current to Ground for Quieter System Operation * Guaranteed Off State with No Input Connection * Supports Large Systems with Minimal Off-State Leakage * ESD Resistant in Accordance with the 2000 V Human Body Model * Low Sat Voltage Reduces System Current Drain by Allowing Use of Higher Resistance Relay Coils
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RELAY/INDUCTIVE LOAD DRIVER SILICON SMALLBLOCK] INTEGRATED CIRCUIT
MARKING DIAGRAM
3 SOT-23 (TO-236) CASE 318 STYLE 6
JW D
1 2
JW D
= Specific Device Code = Date Code
* Telecom: Line Cards, Modems, Answering Machines, FAX * Computer & Office: Photocopiers, Printers, Desktop Computers * Consumer: TVs & VCRs, Stereo Receivers, CD Players, Cassette * *
Recorders, TV Set Top Boxes Industrial: Small Appliances, White Goods, Security Systems, Automated Test Equipment, Garage Door Openers Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches, Lamp Drivers Machines, Feature Phone Electronic Hook Switch
INTERNAL CIRCUIT DIAGRAM Vout (3)
Vin (1)
1.0 k 6.6 V 33 k GND (2)
ORDERING INFORMATION
Device MDC3105LT1 Package SOT-23 Shipping 3000 Units/Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2004
1
March, 2004 - Rev. 3
Publication Order Number: MDC3105LT1/D
MDC3105LT1
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Power Supply Voltage Input Voltage Reverse Input Voltage Repetitive Pulse Zener Energy Limit (Duty Cycle 0.01%) Output Sink Current Continuous Junction Temperature Operating Ambient Temperature Range Storage Temperature Range Symbol VCC Vin(fwd) Vin(rev) Ezpk IO TJ TA Tstg Value 6.0 6.0 -0.5 50 500 150 -40 to +85 -65 to +150 Unit Vdc Vdc Vdc mJ mA C C C
THERMAL CHARACTERISTICS
Characteristic Total Device Power Dissipation(1) Derate above 25C Thermal Resistance Junction to Ambient 1. FR-5 PCB of 1 x 0.75 x 0.062, TA = 25C Symbol PD RqJA Value 225 1.8 556 Unit mW mW/C C/W
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Output Zener Breakdown Voltage (@ IT = 10 mA Pulse) Output Leakage Current @ 0 Input Voltage (VO = 5.5 Vdc, Vin = O.C., TA = 25C) (VO = 5.5 Vdc, Vin = O.C., TA = 85C) Guaranteed "OFF" State Input Voltage (IO 100 mA) V(BRout) V(-BRout) IOO -- -- Vin(off) -- -- -- -- 5.0 30 0.4 V 6.2 -- 6.6 -0.7 7.0 -- V V A
ON CHARACTERISTICS
Input Bias Current (HFE Limited) (IO = 250 mA, VO = 0.25 Vdc) Output Saturation Voltage (IO = 250 mA, Iin = 1.5 mA) Output Sink Current Continuous (VCE = 0.25 Vdc, Iin = 1.5 mA) Iin -- VO(sat) -- IO(on) 250 400 -- 0.12 0.16 mA 0.8 1.6 Vdc mAdc
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MDC3105LT1
TYPICAL APPLICATION-DEPENDENT SWITCHING PERFORMANCE SWITCHING CHARACTERISTICS
Characteristic Propagation Delay Times: High to Low Propagation Delay; Figure 1 (5.0 V 74HC04) Low to High Propagation Delay; Figure 1 (5.0 V 74HC04) High to Low Propagation Delay; Figures 1, 13 (3.0 V 74HC04) Low to High Propagation Delay; Figures 1, 13 (3.0 V 74HC04) High to Low Propagation Delay; Figures 1, 14 (5.0 V 74LS04) Low to High Propagation Delay; Figures 1, 14 (5.0 V 74LS04) Transition Times: Fall Time; Figure 1 (5.0 V 74HC04) Rise Time; Figure 1 (5.0 V 74HC04) Fall Time; Figures 1, 13 (3.0 V 74HC04) Rise Time; Figures 1, 13 (3.0 V 74HC04) Fall Time; Figures 1, 14 (5.0 V 74LS04) Rise Time; Figures 1, 14 (5.0 V 74LS04) Symbol tPHL tPLH tPHL tPLH tPHL tPLH tf tr tf tr tf tr Min -- -- -- -- -- -- -- -- -- -- -- -- Typ 55 430 85 315 55 2.4 45 160 70 195 45 2.4 Max -- -- -- -- -- -- -- -- -- -- -- -- Units nS
mS nS
mS
VCC Vin 50% GND tPLH 90% 50% 10% tr tf tPHL VZ VCC GND
Vout
Figure 1. Switching Waveforms
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MDC3105LT1
TYPICAL PERFORMANCE CHARACTERISTICS
(ON CHARACTERISTICS)
500 HFE, TRANSISTOR DC CURRENT GAIN 450 400 350 300 250 200 150 100 50 0 1.0 10 100 1000 IO, OUTPUT SINK CURRENT (mA) VO = 1.0 V VO = 0.25 V -40C 25C TJ = 85C INPUT VOLTAGE (VOLTS) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 MC54LS04 +BAL99LT1 1.0 1.5 2.0 2.5 3.0 MC68HC05C8 @ 3.3 Vdc MC14049B @ 4.5 Vdc TJ = 25C VO = 0.25 V 3.5 4.0
MC74HC04 @ 4.5 Vdc MC68HC05C8 @ 5.0 Vdc MDC3105LT1 Vin vs. Iin MC74HC04 @ 3.0 Vdc
INPUT CURRENT (mA)
Figure 2. Transistor DC Current Gain
Figure 3. Input V-I Requirement Compared to Possible Source Logic Outputs
500 Iin = 1.5 mA 400 1.2 mA 1.0 mA 0.8 mA 0.6 mA 200 0.4 mA 0.2 mA 0.1 mA 0
50 45 OUTPUT CURRENT (mA) TJ = 85C 35 30 25 20 15 10 5.0 0 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 INPUT CURRENT (mA) -40 C 25C Iout , OUTPUT CURRENT (mA) 40
300
100
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VO, OUTPUT VOLTAGE (Vdc)
Figure 4. Threshold Effects
Figure 5. Transistor Output V-I Characteristic
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.04
8.5 TJ = 25C VZ , ZENER CLAMP VOLTAGE (VOLTS) TJ = -40C 8.0
Vout , OUTPUT VOLTAGE (Vdc)
7.5 7.0 TJ = 85C 25C 6.5 6.0 -40 C
Iout = 500 mA 10 mA 0.1 50 mA 125 mA 1.0 Iin, INPUT CURRENT (mA) 175 mA 350 mA 10
1.0
10
100
1000
IZ, ZENER CURRENT (mA)
Figure 6. Output Saturation Voltage versus I t/Ii http://onsemi.com
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Figure 7. Zener Clamp Voltage versus Zener C rrent
MDC3105LT1
TYPICAL PERFORMANCE CHARACTERISTICS
(OFF CHARACTERISTICS)
10,000 k VCC = 5.5 Vdc 1000 k OUTPUT LEAKAGE CURRENT (nA) 100 k 10 k 1.0 k 100 10 1.0 -55 Vin = 0 Vdc Vin = 0.35 Vdc OUTPUT LEAKAGE CURRENT (nA) Vin = 0.5 Vdc 10 k 100 k TJ = 25C
Vin = 0.5 Vdc
1.0 k
100
Vin = 0.35 Vdc
10 Vin = 0 Vdc
1.0 0
-35
-15 5.0 45 25 TJ, JUNCTION TEMPERATURE (C)
65
85
0
1.0
2.0 3.0 4.0 5.0 VCC, SUPPLY VOLTAGE (Vdc)
6.0
7.0
Figure 8. Output Leakage Current versus Temperature
1.0
Figure 9. Output Leakage Current versus Supply Voltage
RCE(sat)
Iout(max) = 500 mA PW = 7.0 ms DC = 5% *34 ms
*24 ms
PW = 10 ms DC = 20%
TA = 25C = TRANSISTOR PC THERMAL LIMIT * = MAX L/R FROM ZENER PULSED ENERGY LIMIT (REFER TO FIGURE 11) 0.1
PW = 0.1 s DC = 50% CONTINUOUS DUTY
*90 ms
*232 ms
*375 ms
VCC(max) = +6.0 Vdc 0.01 0.1 1.0 Vout (VOLTS)
TYPICAL IZ vs VZ 10
Figure 10. Safe Operating Area
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MDC3105LT1
100 k TA = 25C Emax = 50 mJ L/R = 2 * Emax / (Vzpk * Izpk)
10 k
MAX L/R TIME CONSTANT (ms)
1.0 k
100
10 0.001 0.01 Izpk (AMPS) 0.1 1.0
Figure 11. Zener Repetitive Pulse Energy Limit on L/R Time Constant
1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01 Pd(pk)
0.01 SINGLE PULSE 0.001 0.01 0.1 1.0 10 100 t1, PULSE WIDTH (ms) 1000
PW
t1
t2
PERIOD
DUTY CYCLE = t1/t2
10,000
100,000
1,000,000
Figure 12. Transient Thermal Response
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MDC3105LT1
Using TTR Designing for Pulsed Operation
For a repetitive pulse operating condition, time averaging allows one to increase a device's peak power dissipation rating above the average rating by dividing by the duty cycle of the repetitive pulse train. Thus, a continuous rating of 200 mW of dissipation is increased to 1.0 W peak for a 20% duty cycle pulse train. However, this only holds true for pulse widths which are short compared to the thermal time constant of the semiconductor device to which they are applied. For pulse widths which are significant compared to the thermal time constant of the device, the peak operating condition begins to look more like a continuous duty operating condition over the time duration of the pulse. In these cases, the peak power dissipation rating cannot be merely time averaged by dividing the continuous power rating by the duty cycle of the pulse train. Instead, the average power rating can only be scaled up a reduced amount in accordance with the device's transient thermal response, so that the device's max junction temperature is not exceeded. Figure 12 of the MDC3105LT1 data sheet plots its transient thermal resistance, r(t) as a function of pulse width in ms for various pulse train duty cycles as well as for a single pulse and illustrates this effect. For short pulse widths near the left side of the chart, r(t), the factor, by which the continuous duty thermal resistance is multiplied to determine how much the peak power rating can be increased above the average power rating, approaches the duty cycle of the pulse train, which is the expected value. However, as the pulse width is increased, that factor eventually approaches 1.0 for all duty cycles indicating that the pulse width is sufficiently long to appear as a continuous duty condition to this device. For the MDC3105LT1, this pulse width is about 100 seconds. At this and larger pulse widths, the peak power dissipation capability is the same as the continuous duty power capability. To use Figure 12 to determine the peak power rating for a specific application, enter the chart with the worst case pulse condition, that is the max pulse width and max duty cycle and determine the worst case r(t) for your application. Then calculate the peak power dissipation allowed by using the equation,
Pd(pk) = (TJmax - TAmax) / (RqJA * r(t)) Pd(pk) = (150C - TAmax) / (556C/W * r(t))
the Pd(pk) calculated above. A circuit simulator having a waveform calculator may prove very useful for this purpose.
Notes on SOA and Time Constant Limitations
Figure 10 is the Safe Operating Area (SOA) for the MDC3105LT1. Device instantaneous operation should never be pushed beyond these limits. It shows the SOA for the Transistor "ON" condition as well as the SOA for the zener during the turn-off transient. The max current is limited by the Izpk capability of the zener as well as the transistor in addition to the max input current through the resistor. It should not be exceeded at any temperature. The BJT power dissipation limits are shown for various pulse widths and duty cycles at an ambient temperature of 25C. The voltage limit is the max VCC that can be applied to the device. When the input to the device is switched off, the BJT "ON" current is instantaneously dumped into the zener diode where it begins its exponential decay. The zener clamp voltage is a function of that BJT current level as can be seen by the bowing of the VZ versus IZ curve at the higher currents. In addition to the zener's current limit impacting this device's 500 mA max rating, the clamping diode also has a peak energy limit as well. This energy limit was measured using a rectangular pulse and then translated to an exponential equivalent using the 2:1 relationship between the L/R time constant of an exponential pulse and the pulse width of a rectangular pulse having equal energy content. These L/R time constant limits in ms appear along the VZ versus IZ curve for the various values of IZ at which the Pd lines intersect the VCC limit. The L/R time constant for a given load should not exceed these limits at their respective currents. Precise L/R limits on zener energy at intermediate current levels can be obtained from Figure 11.
Thus for a 20% duty cycle and a PW = 40 ms, Figure 12 yields r(t) = 0.3 and when entered in the above equation, the max allowable Pd(pk) = 390 mW for a max TA = 85C. Also note that these calculations assume a rectangular pulse shape for which the rise and fall times are insignificant compared to the pulse width. If this is not the case in a specific application, then the VO and IO waveforms should be multiplied together and the resulting power waveform integrated to find the total dissipation across the device. This then would be the number that has to be less than or equal to
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MDC3105LT1
Designing with this Data Sheet
1. Determine the maximum inductive load current (at max VCC, min coil resistance & usually minimum temperature) that the MDC3105 will have to drive and make sure it is less than the max rated current. 2. For pulsed operation, use the Transient Thermal Response of Figure 12 and the instructions with it to determine the maximum limit on transistor power dissipation for the desired duty cycle and temperature range. 3. Use Figures 10 & 11 with the SOA notes above to insure that instantaneous operation does not push the device beyond the limits of the SOA plot. 4. While keeping any VO(sat) requirements in mind, determine the max input current needed to achieve that output current from Figures 2 & 6. 5. For levels of input current below 100 mA, use the input threshold curves of Figure 4 to verify that
there will be adequate input current available to turn on the MDC3105 at all temperatures. 6. For levels of input current above 100 mA, enter Figure 3 using that max input current and determine the input voltage required to drive the MDC3105 from the solid Vin versus Iin line. Select a suitable drive source family from those whose dotted lines cross the solid input characteristic line to the right of the Iin, Vin point. 7. Using the max output current calculated in step 1, check Figure 7 to insure that the range of zener clamp voltage over temperature will satisfy all system & EMI requirements. 8. Using Figures 8 & 9, insure that "OFF" state leakage over temperature and voltage extremes does not violate any system requirements. 9. Review circuit operation and insure none of the device max ratings are being exceeded.
APPLICATIONS DIAGRAMS
+3.0 VDD +3.75 Vdc +4.5 VCC +5.5 Vdc
++ AROMAT TX2-L2-5 V
Vout (3) MDC3105LT1 Vin (1)
Vout (3) MDC3105LT1 Vin (1)
74HC04 OR EQUIVALENT
74HC04 OR EQUIVALENT
GND (2)
GND (2)
Figure 13. A 200 mW, 5.0 V Dual Coil Latching Relay Application with 3.0 V-HCMOS Level Translating Interface
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MDC3105LT1
Max Continuous Current Calculation for TX2-5V Relay, R1 = 178 Nominal @ RA = 25C Assuming 10% Make Tolerance, R1 = 178 * 0.9 = 160 Min @ TA = 25C TC for Annealed Copper Wire is 0.4%/C R1 = 160 * [1+(0.004) * (-40-25)] = 118 Min @ -40C IO Max = (5.5 V Max - 0.25V) /118 W = 45 mA +4.5 TO +5.5 Vdc + AROMAT TX2-5V - Vout (3) MDC3105LT1 74LS04 BAL99LT1 74HC04 OR EQUIVALENT AROMAT JS1E-5V + +4.5 TO +5.5 Vdc + AROMAT JS1E-5V - Vout (3) MDC3105LT1 + AROMAT JS1E-5V - AROMAT JS1E-5V + - -
Vin (1) GND (2)
Figure 14. A 140 mW, 5.0 V Relay with TTL Interface
Figure 15. A Quad 5.0 V, 360 mW Coil Relay Bank
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MDC3105LT1
TYPICAL OPERATING WAVEFORMS
4.5
225
3.5 V in (VOLTS) IC (mA) 10 30 50 TIME (ms) 70 90
175
2.5
125
1.5
75
500 M
25 10 30 50 TIME (ms) 70 90
Figure 16. 20 Hz Square Wave Input
Figure 17. 20 Hz Square Wave Response
9
172
7 Vout (VOLTS) IZ (mA) 10 30 50 TIME (ms) 70 90
132
5
92
3
52
1
12 10 30 50 TIME (ms) 70 90
Figure 18. 20 Hz Square Wave Response
Figure 19. 20 Hz Square Wave Response
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MDC3105LT1
PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AH
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08.
A L
3 1 2
BS
V
G C D H K J
DIM A B C D G H J K L S V
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MDC3105LT1
SMALLBLOCK is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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MDC3105LT1/D

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